$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric-Reference-Cited by-同舟云学术

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$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

Published:2012-04 Issue:4 Volume:33 Page:546-548
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liu Han,Ye Peide D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6172299/06163344.pdf?arnumber=6163344

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