Enhanced performance of MoS2/SiO2 field-effect transistors by hexamethyldisilazane (HMDS) encapsulation

Abstract

Scalable methods for improving the performance and stability of a field-effect transistor (FET) based on two-dimensional materials are crucial for its real applications. A scalable method of encapsulating the exfoliated MoS2 on the SiO2/Si substrate by hexamethyldisilazane (HMDS) is explored here for reducing the influence of interface traps and ambient contaminants. This leads to 25 times reduction in trap density, three times decrease in subthreshold swing, three times increase in the peak field-effect mobility, and a drastic reduction in hysteresis. This performance remains nearly the same after several weeks of ambient exposure of the device. This is attributed to the superhydrophobic nature of HMDS and the SiO2 surface hydrophobization by the formation of covalent bonds between the methyl groups of HMDS and silanol groups of SiO2.