Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy-Reference-Cited by-同舟云学术

Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy

Published:2017 Issue:5 Volume:6 Page:P284-P289
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Simoen E.,Dhayalan S. K.,Hikavyy A.,Loo R.,Rosseel E.,Vrielinck H.,Lauwaert J.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Ang K.-W. Chui K.-J. Blitzetsov V. Du A. Balasubramanian N. Samudra G. Li M. F. Yeo Y.-C. , in IEEE Int. Electron Dev. Meeting. Tech. Dig., The IEEE (New York), p. 1069 (2004).

2. n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

3. Strain Enhanced nMOS Using In Situ Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process

4. Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

5. Gate Influence on the Layout Sensitivity of $ \hbox{Si}_{1 - x}\hbox{Ge}_{x}\ \hbox{S/D}$ and $\hbox{Si}_{1 - y}\hbox{C}_{y}\ \hbox{S/D}$ Transistors Including an Analytical Model

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. De-carbonization of self-assembled molecular monolayers doping in silicon;AIP Advances;2022-09-01

2. The Ci(SiI)n defect in neutron-irradiated silicon;Journal of Materials Science: Materials in Electronics;2019-11-30

3. Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon;ACS Omega;2019-02-18

4. Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers;ECS Journal of Solid State Science and Technology;2019

5. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon;Journal of Applied Physics;2018-06-07