Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon-Reference-Cited by-同舟云学术

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Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon

Published:2019-02-18 Issue:2 Volume:4 Page:3539-3545
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Gao Xuejiao¹,Guan Bin¹,Mesli Abdelmadjid²,Chen Kaixiang¹,Sun Limin³,Dan Yaping¹^ORCID

Affiliation:

1. University of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China

2. Institut Matériaux Microélectronique Nanosciences de Provence, UMR 6242 CNRS, Université Aix-Marseille, Marseille Cedex 20 13397, France

3. Instrumental Analysis Center, Shanghai Jiao Tong University, Shanghai 200240, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.8b03372

Reference32 articles.

1. Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

2. Ang, K. W.; Barnett, J.; Loh, W. Y.; Huang, J.; Min, B. G.; Hung, P.; Ok, I.; Yum, J.; Bersuker, G.; Rodgers, M. 300 mm FinFET Results Utilizing Conformal, Damage Free, Ultra Shallow Junctions (Xj ∼ 5nm) Formed with Molecular Monolayer Doping Technique. International Electron Devices Meeting (IEDM): Washington D.C, 2011; pp 35.5. 1–35.5. 4.

3. Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

4. Controlled nanoscale doping of semiconductors via molecular monolayers

5. Lee, Y. J.; Cho, T. C.; Kao, K. H.; Sung, P. J.; Hsueh, F. K.; Huang, P. C.; Wu, C. T.; Hsu, S. H.; Huang, W. H.; Chen, H. C.; Li, Y.; Current, M. I.; Hengstebeck, B.; Marino, J.; Büyüklimanli, T.; Shieh, J. M.; Chao, T. S.; Wu, W. F.; Yeh, W. K. A Novel Junctionless FinFET Structure with Sub-5nm Shell Doping Profile by Molecular Monolayer Doping and Microwave Annealing. International Electron Devices Meeting (IEDM): San Francisco, 2014; pp 32.7.1–32.7.4.

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1. Physical mechanism underlying the enhancement effect of carbon in heavily phosphorus-doped Czochralski silicon substrate on phosphorus out-diffusion within n/n+ epitaxial wafer;Journal of Applied Physics;2024-06-17

2. Grafting of Organophosphonic Acid Monolayers on Hydrogen-Terminated Silicon Surface and Secondary Functionalization in Supercritical Carbon Dioxide Media;Langmuir;2023-08-15

3. Fabrication of amorphous LiPON, LiAlGePO, and GeSn films in low-temperature plasma sputtering process for all-solid-state Li⁺-ion battery;Japanese Journal of Applied Physics;2023-06-08

4. De-carbonization of self-assembled molecular monolayers doping in silicon;AIP Advances;2022-09-01

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