Affiliation:
1. University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 200240 Shanghai, China
Abstract
Unintentional C-related contamination can be readily introduced into the substrate in self-assembled molecular monolayer doping. These C contaminants can bind with dopants, forming interstitial defects, which will in return electrically deactivate the dopants. This issue will exacerbate when the dopant concentration is low. In this paper, a low temperature oxidation method (550 °C for 30 min) is introduced to remove carbon before the phosphorus dopants are driven into silicon in a rapid thermal annealing process. The samples with and without the pre-oxidation process are characterized by the Van der Pauw, low-temperature Hall effect measurements, and secondary ion mass spectrometry analysis. The results indicate that the surface carbon concentration in silicon is nearly completely removed with the pre-oxidation process, as a result of which the electrical activity of phosphorus is indeed increased.
Funder
Major Research Plan
Education and Scientific Research Project of Shanghai
Subject
General Physics and Astronomy
Cited by
1 articles.
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