Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon-Reference-Cited by-同舟云学术

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Author:

Pradeepkumar Aiswarya¹,Zielinski Marcin²^ORCID,Bosi Matteo³,Verzellesi Giovanni⁴^ORCID,Gaskill D. Kurt⁵,Iacopi Francesca¹^ORCID

Affiliation:

1. School of Electrical and Data Engineering, University of Technology Sydney, Broadway, NSW 2007, Australia

2. NOVASiC, Savoie Technolac, Arche Bât. 4, BP 267, 73375 Le Bourget du Lac Cedex, France

3. IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma, Italy

4. Dipartimento di Scienze e Metodi dell'Ingegneria (DISMI) and En&tech, University of Modena and Reggio Emilia, Reggio Emilia, Italy

5. US Naval Research Laboratory, Washington, DC 20375, USA

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference25 articles.

3. J. Michaud , M. Portail , and D. Alquier , Advanced Silicon Carbide Devices and Processing ( InTech, 2015), p. 256.

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