Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an <i>operando</i> study-Reference-Cited by-同舟云学术

Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study

Published:2024 Issue:5 Volume:14 Page:3232-3240
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Pradeepkumar Aiswarya¹²^ORCID,Cortie David³⁴^ORCID,Smyth Erin³^ORCID,Le Brun Anton P.³^ORCID,Iacopi Francesca¹²⁴^ORCID

Affiliation:

1. School of Electrical and Data Engineering, Faculty of Engineering and Information Technology, University of Technology Sydney, Sydney, New South Wales, 2007, Australia

2. ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, New South Wales, 2007, Australia

3. Australian Centre for Neutron Scattering, Australian Nuclear Science and Technology Organization, New Illawarra Road, Lucas Heights, New South Wales 2234, Australia

4. ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Melbourne, Victoria, 3800, Australia

Abstract

High-temperature operando neutron reflectometry of Ni/Cu-mediated graphene growth on 3C–SiC shows (1) formation of a metal alloy, (2) nickel silicidation releasing atomic carbon, and (3) formation of graphene at 1100 °C in liquid phase.

Funder

Australian Research Council

Australian Institute of Nuclear Science and Engineering

Australian Nuclear Science and Technology Organisation

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA08289J

Reference30 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Hall effect mobility of epitaxial graphene grown on silicon carbide

3. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

4. The quasi-free-standing nature of graphene on H-saturated SiC(0001)

5. Structural features of epitaxial graphene on SiC {0 0 0 1} surfaces

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2. A High Temperature Operando Study of Epitaxial Graphene Growth on Cubic Silicon Carbide Using Neutron Reflectometry;Neutron News;2024-04-02