Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications-Reference-Cited by-同舟云学术

Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications

Published:2017-12 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Tanner Philip,Iacopi Alan,Phan Hoang-Phuong,Dimitrijev Sima,Hold Leonie,Chaik Kien,Walker Glenn,Dao Dzung Viet^ORCID,Nguyen Nam-Trung^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-17985-9.pdf

Reference33 articles.

1. Li, H.-F., Dimitrijev, S., Harrison, H. B. & Sweatman, D. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing. Appl. Phys. Lett. 70(15), 2028–2030 (1997).

2. Chung, G. Y. et al. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Elect. Dev. Lett. 22(4), 176–178 (2001).

3. Ferro, G. 3C-SiC Heteroepitaxial Growth on Silicon: The quest for holy grail, Critical Rev. in Solid State and Mat. Sci. 40, 56–76 (2015).

4. Wang, L. et al. Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C. Thin Solid Films 519, 6443–6446 (2011).

5. Yu, M. B. et al. Deposition of nanocrystalline cubic silicon carbide films using the hot-filament chemical-vapor-deposition method. J. Appl. Physics 87(11), 8155–8158 (2000).

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