SiC Silicon‐on‐Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclobutane-Reference-Cited by-同舟云学术

SiC Silicon‐on‐Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclobutane

Published:1994-06-01 Issue:6 Volume:141 Page:L66-L68
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Steckl A. J.¹²³,Yuan C.¹²³,Tong Q. ‐Y.¹²³,Gösele U.¹²³,Loboda M. J.¹²³

Affiliation:

1. Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221‐0030

2. Wafer Bonding Laboratory, School of Engineering, Duke University, Durham, North Carolina 27708‐0300

3. Down Corning Corporation, Midland, Michigan 48686‐0094

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2054989/pdf

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