Exfoliation of β-Ga2O3 Along a Non-Cleavage Plane Using Helium Ion Implantation
Author:
Funder
DOD | Office of Naval Research
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Perspective—Opportunities and Future Directions for Ga2O3
2. A review of Ga2O3materials, processing, and devices
3. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector
4. Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
5. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors
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