Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Thermally stable photoluminescence centers at 1240 nm in silicon obtained by irradiation of the SiO2/Si system;Journal of Applied Physics;2024-06-04
2. Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition;Symmetry;2023-09-21
3. Luminescence of modified W-centers arising in silicon upon irradiation of the SiO2/Si system by Kr+ ions;Materials Letters;2023-07
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