Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3-Reference-Cited by-同舟云学术

Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3

Published:2018 Issue:10 Volume:7 Page:P519-P523
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Fares Chaker^ORCID,Ren F.^ORCID,Lambers Eric,Hays David C.,Gila B. P.,Pearton S. J.^ORCID

Funder

DOD | Defense Threat Reduction Agency (DTRA)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference50 articles.

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3. Okur Serdal Tompa Gary S. Sbrockey Nick Salagaj Tom Blank Volker Henninger Bernd Baldini Michele Wagner Günter Galazka Zbigniew Yao Yao Rokholt J. Davis Robert F. Porter Lisa M. Belkind Abraham , Vacuum Technology and Coating, May 2017, pp.31

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