Author:
Ren Fan,Yang J. C.,Fares Chaker,Pearton S. J.
Funder
Defense Threat Reduction Agency
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Reference81 articles.
1. Z. Galazka: β-Ga203 for wide-bandgap electronics and optoelectronics. Semicond. Sci. Technol. 33, 113001 (2018). https://doi.org/10.1088/1361-6641/aadf78.
2. B. Bayraktaroglu: Assesment of Gallium Oxide Technology, Air Force Research Lab, Devices for Sensing Branch, Aerospace Components and Subsystems Division, Report AFRL-RY-WP-TR-2017-0167 (2017).
3. M. Higashiwaki and G.H. Jessen: Guest editorial: the dawn of gallium oxide microelectronics. Appl. Phys. Lett. 112, 060401 (2018).
4. M.J. Tadjer, N.A. Mahadik, V. Wheeler, E.R. Glaser, L. Ruppalt, and A.D. Koehler: Editors’ choice communication-A (001) β-Ga203 MOSFET with +2.9 V threshold voltage and Hf02 gate dielectric. ECS J. Solid State Sci. Technol. 5, P468–P470 (2016).
5. M.H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, and M. Higashiwaki: Field-plated Ga203 MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett. 37, 212–215 (2016).
Cited by
28 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献