Editors' Choice Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric-Reference-Cited by-同舟云学术

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Editors' Choice Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

Published:2016 Issue:9 Volume:5 Page:P468-P470
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Tadjer Marko J.,Mahadik Nadeemullah A.,Wheeler Virginia D.,Glaser Evan R.,Ruppalt Laura,Koehler Andrew D.,Hobart Karl D.,Eddy Charles R.,Kub Fritz J.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

3. Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

4. Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

5. Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

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1. Study of geometry effect on the performance of thin-film transistors fabricated with ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition for high voltage applications;Materials Science in Semiconductor Processing;2024-11

2. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

3. Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga₂O₃ single crystal;Physica Scripta;2024-06-13

4. Recent Advanced Ultra‐Wide Bandgap β‐Ga₂O₃ Material and Device Technologies;Advanced Electronic Materials;2024-05-10

5. Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET;Semiconductor Science and Technology;2024-02-07

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