Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

Published:2013-10-01 Issue:1 Volume:211 Page:27-33
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wagner Guenter¹,Baldini Michele¹²,Gogova Daniela¹,Schmidbauer Martin¹,Schewski Robert¹,Albrecht Martin¹,Galazka Zbigniew¹,Klimm Detlef¹,Fornari Roberto¹

Affiliation:

1. Leibniz Institute for Crystal Growth; Max-Born-Str. 2 12489 Berlin Germany

2. CNR-IMEM; Parco Area delle Scienze 37/A 43124 Parma Italy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Transparent Conducting Oxides for Photovoltaics

2. Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal

3. III–Nitride UV Devices

4. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

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