Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga2O3 single crystal

Abstract

Abstract This paper studied the structural, optical, electrical, and dielectric properties of the undoped and 0.05 mol% Sn-doped β-Ga2O3 single crystals through comprehensive characterizations by x-ray diffraction (XRD), Raman scattering, Optical transmittance spectroscopy, x-ray photoelectron spectroscopy (XPS), Ultraviolet photoelectron (UPS) spectroscopy, and dielectric measurements. The optical bandgap decreases as Sn content increases. The results of XPS showed that Sn atoms were successfully added to the host β-Ga2O3 crystal. The position of the Fermi level of 0.05 mol% Sn-doped β-Ga2O3 is calculated to be 2.56 eV above the valence band and 1.85 eV beneath the conduction band. Also, the computed value of the work function of 0.05% mole Sn-doped β-Ga2O3 is 4.53 eV. AC conductivity increases, while dielectric loss and dielectric constant decrease with increasing frequency.