Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

Published:2014-08-20 Issue:9 Volume:7 Page:095501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Okumura Hironori,Kita Masao,Sasaki Kohei,Kuramata Akito,Higashiwaki Masataka,Speck James S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=9/a=095501/pdf

Reference19 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Experimental electronic structure of In2O3and Ga2O3

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Czochralski growth and characterization of β-Ga2O3 single crystals

5. Large-size β-Ga2O3 single crystals and wafers

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