Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

Published:2019-07 Issue:7 Volume:7 Page:071115
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Fares Chaker¹^ORCID,Kneiß Max²^ORCID,von Wenckstern Holger²^ORCID,Grundmann Marius²^ORCID,Tadjer Marko³,Ren Fan¹^ORCID,Lambers Eric⁴^ORCID,Pearton S. J.⁵^ORCID

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, 04103 Leipzig, Germany

3. U.S. Naval Research Laboratory, Washington, DC 20375, USA

4. Nanoscale Research Facility, University of Florida, Gainesville, Florida 32611, USA

5. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

National Science Foundation

Defense Threat Reduction Agency

Office of Naval Research

European Social Fund

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5110498

Reference43 articles.

1. Group-III Sesquioxides: Growth, Physical Properties and Devices

2. Indium-oxide polymorphs from first principles: Quasiparticle electronic states

3. Lattice parameters and Raman-active phonon modes of (InxGa1–x)2O3 for x < 0.4

4. Investigations in the β-Ga2O3/In2O3 system: crystal growth of solid solutions

5. Transparent conducting thin films of GaInO3

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