Effects of Postdeposition Annealing on the Characteristics of HfO[sub x]N[sub y] Dielectrics on Germanium and Silicon Substrates-Reference-Cited by-同舟云学术

Effects of Postdeposition Annealing on the Characteristics of HfO[sub x]N[sub y] Dielectrics on Germanium and Silicon Substrates

Published:2006 Issue:7 Volume:153 Page:F160
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Cheng Chao-Ching,Chien Chao-Hsin,Chen Ching-Wei,Hsu Shih-Lu,Yang Chun-Hui,Chang Chun-Yen

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. Deep Sub-Micron Strained Si0.85Ge0.15Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric

2. Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate

3. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

4. Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)

5. Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

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