4H-SiC Homoepitaxial Growth on Substrate with Vicinal Off-Angle Lower than 1°
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference33 articles.
1. The Epitaxial Growth of Silicon Carbide
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3. Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
4. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
5. http://www.cree.com.
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4. Characterization of morphological defects related to micropipes in 4H-SiC thick homoepitaxial layers;Journal of Crystal Growth;2021-08
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