Abstract
A dilute chlorine trifluoride gas at less than 1% was possible for the cleaning of a silicon carbide chemical vapor deposition (CVD) reactor. For 20 min, the chlorine trifluoride gas at the concentrations of 0.5%–1% in ambient nitrogen at atmospheric pressure could detach the 30 μm-thick particle-type polycrystalline silicon carbide CVD film from the susceptor which had a coating film made of a purified pyrolytic carbon (PPyC). While the PPyC film had some damage due to the shallow fluorine diffusion, it could be recovered without any pit formation by annealing in ambient nitrogen containing a trace amount of oxygen at atmospheric pressure for 10 min at the temperature of 845 °C.
Funder
Kanto Denka Kogyo Co., Ltd.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials