Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor

Author:

Takizawa Yuika,Hayashi Masaya,Habuka HitoshiORCID,Ishiguro Akio,Ishii Shigeaki,Watanabe Toru,Moriyama Yoshikazu,Daigo YoshiakiORCID,Mizushima Ichiro,Takahashi Yoshinao

Abstract

A dilute chlorine trifluoride gas at less than 1% was possible for the cleaning of a silicon carbide chemical vapor deposition (CVD) reactor. For 20 min, the chlorine trifluoride gas at the concentrations of 0.5%–1% in ambient nitrogen at atmospheric pressure could detach the 30 μm-thick particle-type polycrystalline silicon carbide CVD film from the susceptor which had a coating film made of a purified pyrolytic carbon (PPyC). While the PPyC film had some damage due to the shallow fluorine diffusion, it could be recovered without any pit formation by annealing in ambient nitrogen containing a trace amount of oxygen at atmospheric pressure for 10 min at the temperature of 845 °C.

Funder

Kanto Denka Kogyo Co., Ltd.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

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