Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

Author:

Gu Ning,Yang Junwei,Jian Jikang,Song Huaping,Chen Xiaolong

Publisher

Elsevier BV

Reference32 articles.

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3. 4H-SiC homoepitaxial growth on substrate with vicinal off-angle lower than 1° [J];Kojima;Ecs J. Solid State Sc.,2013

4. Structure and morphology of inclusions in 4 offcut 4H-SiC epitaxial layers [J];Mahadik;J. Electron. Mater.,2011

5. Surface defects in 4H-SiC homoepitaxial layers [J];Zhao;Nanotechnol. Precis. Eng.,2020

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