Author:
Gu Ning,Yang Junwei,Jian Jikang,Song Huaping,Chen Xiaolong
Reference32 articles.
1. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies [J];Morkoc;J. Appl. Phys.,1994
2. Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments;Hornberger;IEEE Aerosp. Conf. Proc.,2004
3. 4H-SiC homoepitaxial growth on substrate with vicinal off-angle lower than 1° [J];Kojima;Ecs J. Solid State Sc.,2013
4. Structure and morphology of inclusions in 4 offcut 4H-SiC epitaxial layers [J];Mahadik;J. Electron. Mater.,2011
5. Surface defects in 4H-SiC homoepitaxial layers [J];Zhao;Nanotechnol. Precis. Eng.,2020
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