Surface defects in 4H-SiC homoepitaxial layers
Author:
Affiliation:
1. Shanxi Semicore Crystal Co., Ltd., Taiyuan 030024, China
Funder
Provincial Government of Shanxi
Publisher
AIP Publishing
Subject
Automotive Engineering
Link
https://aip.scitation.org/doi/pdf/10.1016/j.npe.2020.12.001
Reference37 articles.
1. Mechanisms of growth and defect properties of epitaxial SiC
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5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
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