Author:
Cho M.-H.,Chung K. B.,Kim Y. K.,Kim D. C.,Heo J.-H.,Koo B. Y.,Shin Y. K.,Chung U. I.,Moon J. T.,Ko D.-H.
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering
Reference17 articles.
1. N. Kimizuka et al. , in
Technical Digest of 1999 Symposium on VLSI
, 73 (1999).
2. T. Hori ,
Gate Dielectrics and MOS ULSI
, Springer-Verlag, New York (1996).
3. Evidence for Two Distinct Positive Trapped Charge Components in NBTI Stressed p-MOSFETs Employing Ultrathin CVD Silicon Nitride Gate Dielectric
4. P. Kraus, K. Ahmed, T. C. Chua, M. Ersov, H. Karbasi, C. S. Olsen, F. Nouri, J. Holland, R. Zhao, G. Miner, and A. Lepert , in
Technical Digest of 2003 VLSI Symposium
, 143 (2003).
5. Reaction pathways in remote plasma nitridation of ultrathin SiO[sub 2] films
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