Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3481348
Reference36 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Oxidation of Si surface by a pulsed Nd : YAG laser
3. Local oxidation nanolithography on Hf thin films using atomic force microscopy (AFM)
4. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
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