The interfacial electronic structure of fullerene/ultra thin dielectrics of SiO2 and SiON-Reference-Cited by-同舟云学术

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The interfacial electronic structure of fullerene/ultra thin dielectrics of SiO2 and SiON

Published:2010-10 Issue:1-3 Volume:499 Page:136-140
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Cho S.W.,Yi Y.,Chung K.B.,Kang S.J.,Cho M.-H.

Funder

Korea Research Foundation

Ministry of Knowledge Economy, Republic of Korea

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference32 articles.

1. Organic Thin Film Transistors for Large Area Electronics

2. Active-Matrix Displays Driven by Solution-Processed Polymeric Transistors

3. An electrophoretic ink for all-printed reflective electronic displays

4. Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

5. Organic electronics on paper

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band Bending at Metal-Semiconductor Interfaces, Ferroelectric Surfaces and Metal-Ferroelectric Interfaces Investigated by Photoelectron Spectroscopy;Surface Science Tools for Nanomaterials Characterization;2015

2. Origin of the Surface-Induced First Hyperpolarizability in the C60/SiO2 System: SCC-DFTB Insight;The Journal of Physical Chemistry Letters;2013-12-16

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