Effect of Incorporated Nitrogen on the Band Alignment of Ultrathin Silicon-oxynitride Films as a Function of the Plasma Nitridation Conditions-Reference-Cited by-同舟云学术

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Effect of Incorporated Nitrogen on the Band Alignment of Ultrathin Silicon-oxynitride Films as a Function of the Plasma Nitridation Conditions

Published:2011-05-13 Issue:5 Volume:58 Page:1169-1173
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Yim C. J.,Ko D.-H.,Park S. H.,Lee W. J.,Cho M.-H.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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5. Growth kinetics and complex characterization of PECVD SiOxNydielectric films;Materials Research Express;2016-05-13

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