Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films-Reference-Cited by-同舟云学术

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Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films

Published:2014-12-16 Issue:3 Volume:4 Page:P53-P56
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Sophia P. Joice,Attolini G.,Bosi M.,Buffagni E.,Ferrari C.,Frigeri C.,Vad K.,Csik A.,Takáts V.,Zolnai Z.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference14 articles.

1. The MOCVD Challenge

2. High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

3. Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application

4. Abrupt InGaP∕GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy

5. Atomic diffusion and interface electronic structure at In[sub 0.49]Ga[sub 0.51]P∕GaAs heterojunctions

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1. Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures;Advanced Electronic Materials;2024-05-23

2. Characterization of nanoscale atomic motion of Si in polycrystalline Cu layer;Heliyon;2024-02

3. Electrical properties of CuO/ZnO heterojunctions prepared by spray pyrolysis;Semiconductor Science and Technology;2023-07-06

4. Improved photoluminescence properties of red YVO4: Eu3+ thin films deposited by laser ablation: Influence of deposition time;Inorganic Chemistry Communications;2022-01

5. First-Principles Calculations of Band Offsets at Heterovalent ε - Ge/InxAl1−xAs Interfaces;Physical Review Applied;2018-10-22

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