Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
2. T. Chung, S.R. Bank, J. Epple, K. C. Hsieh, IEEE Electron Dev. 48(5) (2001).
3. Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy
4. Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers
5. Long-wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapour-phase epitaxy
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