First-Principles Calculations of Band Offsets at Heterovalent ε - Ge/InxAl1−xAs Interfaces-Reference-Cited by-同舟云学术

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First-Principles Calculations of Band Offsets at Heterovalent ε - Ge/InxAl1−xAs Interfaces

Published:2018-10-22 Issue:4 Volume:10 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Greene-Diniz G.,Grüning M.

Funder

Department for the Employment of Northern Ireland and InvestNI

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.10.044052/fulltext

Reference79 articles.

1. Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

2. Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors

3. Device Requirements for Optical Interconnects to Silicon Chips

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence;Journal of Materials Chemistry C;2023

2. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In_xAl_1–xAs Stressors;ACS Omega;2022-02-08

3. Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure;ACS Applied Electronic Materials;2021-10-14

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