Abrupt InGaP∕GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2884694
Reference16 articles.
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3. On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs
4. Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
5. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
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