High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform-Reference-Cited by-同舟云学术

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High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform

Published:2010 Issue:11 Volume:13 Page:H388
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Myronov Maksym,Dobbie Andy,Shah Vishal A.,Liu Xue-Chao,Nguyen Van H.,Leadley David R.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures

2. High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

3. Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures

4. High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

5. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

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1. Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature;Advanced Materials Interfaces;2023-11-27

2. Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates;Microelectronic Engineering;2023-08

3. Holes Outperform Electrons in Group IV Semiconductor Materials;Small Science;2023-03-02

4. High mobility Ge 2DHG based MODFETs for low-temperature applications;Semiconductor Science and Technology;2023-01-27

5. Self-organised fractional quantisation in a hole quantum wire;Journal of Physics: Condensed Matter;2018-02-14

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