Self-organised fractional quantisation in a hole quantum wire
Author:
Funder
Engineering and Physical Sciences Research Council
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://iopscience.iop.org/article/10.1088/1361-648X/aaabab/pdf
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1. High Quality Strained Ge Epilayers on a Si[sub 0.2]Ge[sub 0.8]/Ge/Si(100) Global Strain-Tuning Platform
2. Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium
3. New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology
4. Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
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