Possible zero-magnetic field fractional quantization in In0.75Ga0.25As heterostructures

Author:

Liu L.12ORCID,Gul Y.1ORCID,Holmes S. N.2ORCID,Chen C.3ORCID,Farrer I.4ORCID,Ritchie D. A.3ORCID,Pepper M.12ORCID

Affiliation:

1. London Centre for Nanotechnology, University College London 1 , 17-19 Gordon Street, London WC1H 0AH, United Kingdom

2. Department of Electronic and Electrical Engineering, University College London 2 , Torrington Place, London WC1E 7JE, United Kingdom

3. Cavendish Laboratory, University of Cambridge 3 , J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom

4. Department of Electronic and Electrical Engineering, University of Sheffield 4 , Mappin Street, Sheffield S1 3JD, United Kingdom

Abstract

In this Letter, we report a systematic study of a structure found in zero magnetic field at or near 0.2 ×(e2/h) in In0.75Ga0.25As heterostructures, where e is the fundamental unit of charge and h is Planck's constant. This structure has been observed in many samples and stays at near constant conductance despite a large range of external potential changes, the stability indicating a quantum state. We have also studied the structure in the presence of high in-plane magnetic fields and find an anisotropy which can be related to the Rashba spin–orbit interaction and agrees with a recent theory based on the formation of coherent back-scattering. A possible state with conductance at 0.25 ×(e2/h) has also been found. The quantum states described here will help with the fundamental understanding of low-dimensional electronic systems with strong spin–orbit coupling and may offer new perspectives for future applications in quantum information schemes.

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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