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A Combined Gas Cluster Ion Beam (GCIB) and Chemical-Mechanical Polish (CMP) Planarization Scheme for Tungsten Replacement Metal Gate (W-RMG)

  • Published:2016 Issue:7 Volume:5 Page:P404-P408
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Tseng Wei-Tsu,Long Justin,Mohan Kaushik,Kagalwala Taher,Wu Changhong,Truong Connie

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Beam Shaping as a Solution for Ultra-High Precision Planarization Process;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. A Metal Gate Height Variation Control Method by the Metal Gate Etch at the FinFET Technology;2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2022-05-02

3. A Material Removal Rate Model for Tungsten Chemical Mechanical Planarization;ECS Journal of Solid State Science and Technology;2019

4. Communication—Selective Adsorption of PEG on SiO2for High Removal Selectivity in Tungsten CMP;ECS Journal of Solid State Science and Technology;2018

5. Influence of pre-polishing process on site flatness values of polished wafers;Materials Science in Semiconductor Processing;2017-09
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