A Metal Gate Height Variation Control Method by the Metal Gate Etch at the FinFET Technology
Author:
Affiliation:
1. Semiconductor Manufacturing International Corporation,Technology Research&Development,Shanghai,China
Funder
Shanghai Rising-Star Program
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9792471/9792473/09792474.pdf?arnumber=9792474
Reference12 articles.
1. What is Killing Moore's Law? Challenges in Advanced FinFET Technology Integration
2. Review of FINFET technology;jurczak;IEEE International SOI Conference,2009
3. A combined gas cluster ion beam (GCIB) and chemical-mechanism polish planarization scheme for tungsten replacement metal gate (W-RMG);tseng;ECS Journal of Solid State Science and Technology,2016
4. Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect
5. Gas cluster ion beam processing for improved self-aligned contact yield at 7nm node FinFET;su;Advanced Semiconductor Manufacturing Conference,2018
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