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A Material Removal Rate Model for Tungsten Chemical Mechanical Planarization

  • Published:2019 Issue:6 Volume:8 Page:P370-P378
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Xu QinzhiORCID,Chen Lan,Liu Jianyun,Cao He

Funder

Science and Technology Special Project of Beijing

National Major Science and Technology Specail Project of China

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of Anodic Dissolution of Tungsten in Sulfate–Fluoride Solutions;Metals;2024-09-02

2. Optimizing highly reflective CNC abrasive polishing on aluminum sheets;Materials and Manufacturing Processes;2024-01-22

3. Assessing the wear degradation of tungsten in acidic solutions using a lubricated tribocorrosion model;Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology;2023-08-10

4. A Physics-Based Chip-Scale Surface Profile Model for Tungsten Chemical Mechanical Planarization;ECS Journal of Solid State Science and Technology;2023-02-01

5. Profile control processes based on contact types in silicon wafer DSP manufacturing management;Proceedings of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture;2023-01-11
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