Influence of pre-polishing process on site flatness values of polished wafers-Reference-Cited by-同舟云学术

Influence of pre-polishing process on site flatness values of polished wafers

Published:2017-09 Issue: Volume:68 Page:15-20
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhong Genghang,Ning Yongduo,Zhou Qigang,Bian Yongzhi,Wang Xin,Qu Xiang,Wang Lei,Zhao Erjing

Funder

National Science and Technology Major Project of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

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2. A Combined Gas Cluster Ion Beam (GCIB) and Chemical-Mechanical Polish (CMP) Planarization Scheme for Tungsten Replacement Metal Gate (W-RMG)

3. A. Maury, D. Ouma, D. Boning, A modification to Preston’s equation and impact on pattern density effect modeling, C. Advanced Metalization and Interconnect Systems for ULSI Applications,1997.

4. Variation of polish pad shape during pad dressing

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