Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications-Reference-Cited by-同舟云学术

Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications

Published:2011 Issue:5 Volume:14 Page:H205
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lim Wantae,Jeong Jae-Hyun,Lee Heon-Bok,Lee Jae-Hoon,Hur Seung-Bae,Ryu Jong-Kyu,Kim Ki-Se,Kim Tae-Hyung,Song Sang Yeob,Hur Won-Goo,Kim Sung Tae,Pearton S. J.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference25 articles.

1. A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

2. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

4. Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation

5. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

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