Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching-Reference-Cited by-同舟云学术

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Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

Published:2019-12-19 Issue:1 Volume:13 Page:016505
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Yamada Shinji,Omori Masato,Sakurai Hideki,Osada Yamato,Kamimura Ryuichiro,Hashizume Tamotsu,Suda Jun,Kachi Tetsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.7567/1882-0786/ab5ffe/pdf

Reference33 articles.

1. Recent progress of GaN power devices for automotive applications

2. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

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1. Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC;Journal of Applied Physics;2024-09-06

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