Author:
Hsu Chia-Lin,Perng Dung-Ching,Lin Wen-Chin,Lu Kuan-Ting,Tsai Teng-Chun,Huang Climbing,Wu J. Y.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. E. T. Ogawa, J. Kim, G. S. Haase, H. C. Mogul, J. W. McPherson ,Proc. International Reliability in Physics Symp., 166 (2003).
2. Dominant Factors in TDDB Degradation of Cu Interconnects
3. L. Arnaud, D. Galpin, S. Chhun, C. Monget, E. Richard, D. Roy, C. Besset, M. Vilmay, L. Doyen, P. Waltz, E. Petitprez, F. Terrier, G Imbert, Y Le Friec ,Proc. IEEE Int. Interconnect Technology Conf., p. 179 (2009).
4. Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-k interconnects by using CF[sub 3]I etching
5. Addressing Cu/Low-$k$ Dielectric TDDB-Reliability Challenges for Advanced CMOS Technologies
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