Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications-Reference-Cited by-同舟云学术

Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

Published:2012 Issue:1 Volume:1 Page:N1-N5
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Lukosius M.,Wenger Ch.,Blomberg T.,Abrutis A.,Lupina G.,Baumann P. K.,Ruhl G.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference22 articles.

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3. New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition

4. Metallorganic Chemical Vapor Deposition of Sr-Ta-O and Bi-Ta-O Films for Backend Integration of High-k Capacitors

5. SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates

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