New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition

Published:2002-06-15 Issue:Part 2, No. 6B Volume:41 Page:L729-L731
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chae Byung-Gyu,Lee Won-Jae,You In-Kyu,Ryu Sang-Ouk,Jung Moon-Youn,Yu Byoung-Gon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=6B/a=L729/pdf

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical prediction by DFT on properties of β′-SrTa2O6 crystal;Processing and Application of Ceramics;2023

2. Comprehensive theoretical investigation of electronic, structural, optical, elastic, and thermodynamic properties of orthorhombic SrTa₂O₆ compound;Canadian Journal of Physics;2022-12-01

3. Comprehensive theoretical investigation of electronic, structural, optical, elastic, and thermodynamic properties of orthorhombic SrTa2O6 compound;CAN J PHYS;2022

4. An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices;Journal of Materials Science: Materials in Electronics;2022-03-08

5. SrTa2O6 induced low voltage operation of InGaZnO thin-film transistors;Thin Solid Films;2018-11

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