Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3-Reference-Cited by-同舟云学术

Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3

Published:2019 Issue:7 Volume:8 Page:Q3133-Q3139
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Tadjer Marko J.^ORCID,Fares Chaker^ORCID,Mahadik Nadeemullah A.,Freitas Jaime A.,Smith David,Sharma Ribhu^ORCID,Law Mark E.,Ren Fan^ORCID,Pearton S. J.^ORCID,Kuramata A.

Funder

ONR Global

DOD | Defense Threat Reduction Agency

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference48 articles.

1. Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3Layers Grown by MOVPE on (010)-Oriented Substrates

2. Group-III Sesquioxides: Growth, Physical Properties and Devices

3. Recent progress in Ga2O3power devices

4. A review of Ga2O3materials, processing, and devices

5. β-Ga2O3 for wide-bandgap electronics and optoelectronics

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