Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3Layers Grown by MOVPE on (010)-Oriented Substrates-Reference-Cited by-同舟云学术

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Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga2O3Layers Grown by MOVPE on (010)-Oriented Substrates

Published:2016-10-20 Issue:2 Volume:6 Page:Q3040-Q3044
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Baldini Michele,Albrecht Martin,Fiedler Andreas,Irmscher Klaus,Schewski Robert,Wagner Günter

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Recent progress in transparent oxide semiconductors: Materials and device application

2. Transparent semiconducting oxides: materials and devices

3. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals

4. A Reinvestigation of β-Gallium Oxide

5. Large-size β-Ga2O3 single crystals and wafers

Cited by 249 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High quality heavy Sn doping β‑Ga2O3 film with high mobility grown by time division transport Metal Organic Chemical Vapor Deposition;Journal of Alloys and Compounds;2024-10

2. Characterisation of Sn-Cl co-doped β-Ga2O3 thin films deposited via spray pyrolysis and their application in UV detector devices;Sensors and Actuators A: Physical;2024-10

3. Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy;Surfaces and Interfaces;2024-10

4. High-Efficiency Doping Outcomes in Homoepitaxial β-Ga₂O₃ Films via Pulsed Si Doping with MOCVD;Crystal Growth & Design;2024-09-13

5. Epitaxial Growth of Ga2O3: A Review;Materials;2024-08-28

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