Reduced Pressure CVD Growth of Ge and Ge1−xSnxAlloys-Reference-Cited by-同舟云学术

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Reduced Pressure CVD Growth of Ge and Ge1−xSnxAlloys

Published:2013 Issue:5 Volume:2 Page:N99-N102
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wirths S.,Buca D.,Mussler G.,Tiedemann A. T.,Holländer B.,Bernardy P.,Stoica T.,Grützmacher D.,Mantl S.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Optical gain in silicon nanocrystals

2. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

3. Ge-on-Si laser operating at room temperature

4. Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

5. Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells

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1. In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes;Journal of Vacuum Science & Technology B;2024-06-26

2. Growth of Ge on silicon-on-insulator wafer by plasma enhanced chemical vapor deposition and fabrication of microline photodetector using the Ge layer;Materials Science and Engineering: B;2024-04

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4. Impact of flows, temperature and pressure on the GeSn growth kinetics with a digermane and tin tetrachloride chemistry;Materials Science in Semiconductor Processing;2024-01

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