Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3279307
Reference33 articles.
1. Advances in SiGeSn technology
2. Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium
3. Strain-induced band gap shrinkage in Ge grown on Si substrate
4. Direct-gap optical gain of Ge on Si at room temperature
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