Impact of EUV photomask line-edge roughness on wafer prints
Author:
Affiliation:
1. IBM Corp. (United States)
2. Toppan Photomasks, Inc. (United States)
3. IBM Microelectronics (United States)
Publisher
SPIE
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. EUV lithography: LER design, mask, and wafer impact;Optical and EUV Nanolithography XXXVII;2024-04-10
2. WEREWOLF: sensitivity optimization for early 7 nm EUV masks using an optical 19x nm inspection system;Photomask Technology 2018;2018-10-03
3. Minimizing "Tone Reversal" during 19x nm mask inspection;Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology;2018-06-12
4. Impact of EUV mask absorber sidewall angle on patterning robustness;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19
5. Contribution of EUV mask CD variability on LCDU;SPIE Proceedings;2017-03-24
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