WEREWOLF: sensitivity optimization for early 7 nm EUV masks using an optical 19x nm inspection system-Reference-Cited by-同舟云学术

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WEREWOLF: sensitivity optimization for early 7 nm EUV masks using an optical 19x nm inspection system

Published:2018-10-03 Issue: Volume: Page:
ISSN:
Container-title:Photomask Technology 2018
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Author:

Badger Karen D.,Yonetani Masashi,Toda Yusuke,Kagawa Masayuki,Isogawa Takeshi,Heumann Jan

Publisher

SPIE

Reference11 articles.

1. Shedding light on EUV inspection;Seki,2012

2. Illuminating EUVL mask defect printability;Badger,2012

3. Impact of EUV photomask line edge roughness on wafer prints;John Qi,2012

4. DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm;Naka,2017

5. DUV inspection tool application for beyond optical resolution limit pattern;Inoue,2015

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography;Handbook of Laser Micro- and Nano-Engineering;2021

2. Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography;Handbook of Laser Micro- and Nano-Engineering;2020

3. Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-28

4. The study of relationship between defect sensitivity and inspectability on EUV masks with 19x nm mask inspection;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

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