Impact of EUV mask absorber sidewall angle on patterning robustness-Reference-Cited by-同舟云学术

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Impact of EUV mask absorber sidewall angle on patterning robustness

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
language:
Short-container-title:

Author:

Melvin Lawrence S.,Kandel Yudhishthir,Fuehner Tim,Gao Weimin

Publisher

SPIE

Reference10 articles.

1. M. Irmscher, “IMS Chips Masks.” [Online]. Available: https://www.ims-chips.de/home.php?id=a2b5c2en&suchwort=&pubsuche=&pubstichwort=&pubjahr=&zeigegesamt=&print=1.

2. Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography;Erdmann,2017

3. Rigorous FEM simulation of EUV masks: influence of shape and material parameters;Pomplun,2006

4. Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography

5. Using the Normalized Image Log-Slope;Mack,2001

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective;Micro and Nano Engineering;2023-09

2. Fast mask model for extreme ultraviolet lithography with a slanted absorber sidewall;Applied Optics;2021-07-06

3. Perspectives and tradeoffs of absorber materials for high NA EUV lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2020-10-01

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